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RF GaN Bare-die (Discrete)

RF GaN Bare-die (Discrete)
WAVEPIA
WAVEPIA

Region

South Korea
South Korea

Category

Electronic intelligence and electronic warfare
Electronic intelligence and electronic warfare

Application - Broadband Amplifiers- U/VHF Amplifiers- Base Station Communications- Satellite Communications- Radar Application- Drone/UAV Characteristics - GaN on SiC Technology- High Breakdown Voltage- High Efficiency- Reliability Monitoring Function- Designed for 28/48V Application- Customize Available- 12-15V Applications Possible: PAE/OUTPUT 5~15% Reduced Specifications Operating Voltage 28V Operation Frequency DC-20GHz Operating Modes CW/Pulsed (High POUT & High PAE) Peak Output Power (Psat) >60 Power Added

Efficiency High Optional Function Reliability Monitoring (To Predict MTTF)
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