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RF GaN Transistor(WG40280A)

RF GaN Transistor(WG40280A)
WAVICE
WAVICE

Region

South Korea
South Korea

Category

Електронна розвідка та радіоелектронна боротьба
Електронна розвідка та радіоелектронна боротьба

Application - Amplifiers- IMFET- Unmatched GaN Transistor- RF GaN Transistor- Broadband Transistor- Communication Transistor- RF and Microwave Components- SSPA- Communication Transistor,- Jammer Characteristics WG40280B- 0.4um Wavice Durable Gate Process- Durable GaN- Enhanced Ruggedness- High Efficiency- Excellent Thermal Stability- Designed for 28~50V Application Specifications Peak Output Power(Psat) 218W[50V] Operating Voltage 28~50V Operation Frequency DC-4GHz Breakdown Voltage >150V Power Added Efficiency

High Small Signal Gain [email protected][50V]
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