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RF GaN Transistor (Unmatched/Matched: IMFET)

Region
South Korea
Category
Electronic intelligence and electronic warfare
Application - Broadband Amplifiers- U/VHF Amplifiers- IFF (Identification Friend or Foe)- Base Station Communications- Satellite Communications- Radar System (SSPA, TWTA Replacement)- Avionics RF Module- Cellular Infrastructure Characteristics - GaN on SiC Technology- High Breakdown Voltage- High Efficiency- Reliability Monitoring Function- Designed for 28/48V Application- Customize Available- 12-15V applications possible: PAE/OUTPUT 5~15% Reduced Specifications Operating Voltage 28V/48V Operation Frequency Up to
7GHz Operating Modes CW/Pulsed (High POUT & High PAE) Output Power 5-400W Efficiency at P3dB Above 50% Optional Function Reliability Monitoring (To Predict MTTF)